KVR1066D3N7/4G 4GB 2Rx8 512M x 64-Bit PC3-8500 CL7 240-Pin DIMM Laptop Memory

SKU: B8MXT07NMP2140
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KVR1066D3N7/4G 4GB 2Rx8 512M x 64-Bit PC3-8500 CL7 240-Pin DIMM Laptop Memory
Description:
- This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1066 CL7 SDRAM (Synchronous DRAM), 2Rx8 memory module, based on sixteen 256M x 8-bit DDR3-1066 FBGA components.
- The SPD is programmed to JEDEC standard latency DDR3-1066 timing of 7-7-7 at 1.5V. This 240-pin DIMM uses gold contact fingers.
- The electrical and mechanical specifications are as follows

Specifications:
- CL(IDD) :7 cycles
- Row Cycle Time (tRCmin):50.63ns (min.)
- Refresh to Active/Refresh :160ns (min.)
- Command Time :(tRFCmin)
- Row Active Time (tRASmin):37.5ns (min.)
- Power (Operating) :1.320 W*
- UL Rating :94 V - 0
- Operating Temperature :0o C to 85o C
- Storage Temperature :-55o C to +100o C

Features:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 533MHz fCK for 1066Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 6 (DDR3-1066)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 orMRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 1.18” (30mm), double sided component

Command Time (tRFCmin)